Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy

The GaInNAs/GaAs quantum dot (QD) system is expected to extend the emission wavelength of GaAs-based lasers. We successfully formed GaInNAs QDs by chemical beam epitaxy (CBE). The growth temperature dependence of the size and density of GaInNAs QDs was quite different from GaInAs QDs. It was found that the size of GaInAs QDs increased and density decreased with increasing growth temperature from 500/spl deg/C to 540/spl deg/C. On the other hand, GaInNAs QDs showed a small change of size and density. A density of about 9/spl times/10/sup 10/ cm/sup -2/ was obtained for GaInNAs QDs at 540/spl deg/C which is three times larger than that of GaInAs QDs. Thus, nitrogen introduction into the QDs provides a novel control technique of dot size and density.