Improvement on Electronic Characteristics of TAOX/TIOX Dual-Layer Structure Resiative Memory

With the rapid development of modern information, resistance random access memory (RRAM) has been a continuous research hotspot because of its large storage capacity, high reading speed, and excellent low-power performance. In this paper, in order to improve switching ratio of single-layer TiOx structure and uniformity of device, the double-layer TaOx/TiOx-based RRAM was fabricated and characterized by a semiconductor device analyzer (Agilent B1500A). The results showed that the uniformity was improved, and the window was enlarged from 33 to 100 by adding the TaOx layer in ITO/TiOx/TiN structure. And the devices with double-layer TaOx/TiOx had lower operating voltage and more consistent SET/RESET voltage distribution compared with the single-layer TiOx structure. In addition, the position of TaOx insertion layer was further discussed and it was found that the insertion layer could effectively increase the oxygen vacancy concentration in the resistive layer. A possible switching mechanism of TaOx/TiOx-based RRAM was inferred. It was believed that TaOx/TiOx double-layer structure can reduce the randomness of the filament's formation/fracture position to some extent, thereby making the uniformity better.