A LUT-Based Model of Tri-input TFET

In this paper, we propose a simplified method for table-based model of tri-input tunneling field effect transistor (tri-input TFET). We use TCAD simulations to extract current and capacitance characteristics of N-type transistor, and then set the look-up table (LUT) with these data. A simplified method for LUT is proposed to reduce its data for the SPICE simulation of some basic CMOS logic circuits such as NAND, NOR and NMAJOR. The validity of the model is demonstrated by comparing the SPICE and TCAD simulation results. This work compensates the lack in the model oftri-input devices and provides new approach for reducing LUT data.