Improved Device Performance of MoTe2 nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

In this paper, we focus on improving MoTe2 nanoribbon MOSFETs device performance, with solution-processed HfAlOx high-k dielectric film compared with SiO2. First, 2H-MoTe2 nanoribbons with high purity and quality were synthesized by CVD process. Then, solution-processed synthesis of HfAlOx thin film was systematically investigated. HfAlOx thin film obtained with 0.3M precursor concentration, annealing at 400°C in mixed gas of N2(95%) + H2(5%) showed low leakage current density and high k value. Finally, improved device performance of MoTe2 nanoribbon transistors with mobility ~9.35 cm²V⁻¹s⁻¹, Ion/Ioff ratio ~1.85×l0⁵, and the threshold voltage ~ -3.52V were demonstrated.