Electromigration Reliability of a Complex through Silicon via Structure

Three-dimension integration as a promising technology has attracted much attention and Through Silicon via (TSV), employed to vertically connect planar circuits, is critical to the technology. In this work, we analyzed ElectroMigration (EM) reliability of a complex TSV, combining two TSVs with different depth, whose EM simulation was rarely reported. The Black's parameters were extracted to estimate the EM reliability of the complex TSV, which were located in normal range. The simulation results indicated that the complex TSV, fabricated by a simplified method, performed well in EM reliability.