Switching Effects from a High-Resistance State to a High Electrical Conductivity State in Mo/P-Cdte/Mo Structure

The time-voltage characteristics of high-resistance Mo/p-CdTe/Mo structures under influence of single voltage pulses in range from 20 to 80 V and duration up to 30 ns were studied. We established that for high-resistivity Me-A₂B₆-Me structures, a restorable switching into a high electrical conductivity state can be realized as the effect of current pulses duration up to 30 ns and no more than 20 V voltage amplitude. It has been proposed the physical mechanism that leads to realizing switching effect. Such time-voltage characteristic allows to conclude that such Me-A₂B₆-Me structures is perspective for use as keys and switching elements of micro- and nanosystem technology.