An approach to improve performance of an SELBOX TFET using hetero-stacked source

The proposed work incorporates advantage of hetero-stacked source and Selective Buried Oxide (SELBOX) structure in a single device. A comparative performance assessment of the presented structure with the existing structures has been done after analyzing critical parameters. The parameters such as drain current, sub-threshold swing, and capacitances are studied for the proposed structure. It has been observed that the structure improves the I_ON/I_OFF ratio and Subthreshold Swing (SS). A current ratio of 10¹⁰ and Point subthreshold swing of 27 mV/dec and Average SS of 36 mV/dec is obtained. An On-current of 2.2 × 10^-6A is also observed.