Theoretical Study of Current Oscillations in Gunn Diodes Based on Graded III-nitrides Operating in Submillimeter Range: Frequency and Power

The power spectrums of oscillations of 1 μm-thick Gunn diodes based on graded III-nitrides are assessed by means of hydrodynamic simulations calibrated against Monte Carlo simulation data. The simulation results predict superior performance of diodes based on GaInN, BInN and AlInN graded-gap alloys above 300 GHz. We found that the diode based on graded Ga0.8In0.2N - InN has the highest RF power for the first three modes oscillations. In such diode The RF power at a fundamental frequency of 358 GHz is three times greater, and the DC power is 17% less than InN diode and GaN and AlN diodes are had not continuous Gunn oscillations due to the insufficient electron concentration in the transit zone.