Impact of N/sub 2/O activation treatment on junction characteristics of p/sup +//n junctions formed by a solid diffusion source

The authors have investigated p/sup +//n junctions formed by a solid-boron-source under different activation ambient gases. It was found that the junction depth strongly depends on the activation ambient gas and the corresponding flow rate. Especially in the N/sub 2/O ambient, the diffusion of boron is enormously enhanced. Furthermore, the thermal stability of CoSi/sub 2/ is profoundly improved by the N/sub 2/O treatment during activation.