InGaAs/GaAs Multi-Quantum Well Nano-Ridge Waveguide Photodetector Epitaxially Grown on a 300-mm Si Wafer

We demonstrate p-i-n InGaAs/GaAs quantum well nano-ridge waveguide photodetectors epitaxially grown and fully processed on a 300mm Si wafer. The devices exhibit low dark currents of 10pA, current density of 1. 43 × 10^-5 A/cm², at -1V bias and internal responsivities of 0.48A/W at 1020nm wavelength.