Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation

The formation of nano-cavities in silicon, induced by hydrogen implantation, has been studied by Rutherford Back-Scattering Channeling (RBS/C), Atomic Force Microscope (AFM) and infrared reflection spectra (IR). The Specimens, implanted with 160 keV hydrogen ions to a dose of 8.2/spl times/10/sup 16/ cm/sup -1/, are annealed at 400/spl deg/C for times of 30 minutes. The result of RBS shows that the surface damage due to implantator is little after annealing. AFM validates the swelling caused by the implantation of Hydrogen. By detailed theoretical analysis and computer simulation of IR reflection interference spectra with the model described in the text, the depth distribution of the cavities concentration was obtained.