Accumulation and Annealing of Radiation Donor Defects in Arsenic-Implanted Hg0.7Cd0.3Te Films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg_0.7Cd_0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode `base' layers in Hg_0.7Cd_0.3Te and Hg_0.8Cd_0.2Te films was established and tentatively explained.