Vector Network Analyzer Calibration for Characterization of Packaged Power MOSFET Device at RF Frequency

The paper presents establishing vector network analyzer calibration for characterization of packaged power MOSFET device at RF frequency. Recent power SiC MOSFET device has high-speed switching capability, thus, its equivalent circuit parameter shall be extracted up to several hundred MHz frequency. For parameter extraction at RF frequency, MOSFET device shall be measured by RF vector network analyzer (VNA). However, VNA shall be calibrated at package electrode structure of MOSFET device. The calibration standards are commercially available for performing reciprocal-thru short-open-load (SOLR) calibration. In the paper, Thru-Reflect-Match (TRM) calibration scheme is applied as new calibration method for characterization of packaged power MOSFET device. Before TRM calibration, the procedure and standard thru device characterization have been established. Finally, from measurement results, parameter, i.e. gate-drain capacitance, are extracted for SiC MOSFET devices and their results have been compared between VNA calibration methods, i.e. SOLR and TRM.