Energetics of interstitial defects and TED in ultra low energy implants

In this paper, we discuss the mechanisms by which small clusters evolve through "magic" sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si interstitial atoms between different extended defects, leading to a decrease of their formation energy. A detailed analysis of extrinsic defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and simulating extrinsic defect kinetics and thus predict transient enhanced diffusion evolution in particular for the Ultra Low Energy implants.