Performance Analysis of FinFET based 2:1 Multiplexers for Low Power Application

In this paper, a comparison is made between FINFET based Gate Diffusion Input (GDI) and Pass Transistor (PT) based 2:1 Multiplexers in terms of delay, average power dissipation, and Power delay product (PDP). Both the multiplexers are designed using an 18nm technology node and functional at 0.8V supply voltage. GDI based mux consumes very less power dissipation of 46.69nW, which is 46.04% lesser than the PT based Mux. If the user requirement is of fast operation than GDI based Mux meets the criteria. It takes 2.11ps to pass the signal at the output, which is 4.3 times faster than PT based Mux. PDP of GDI and PT based Mux is 0.143aJ and 0.755aJ. Additionally, GDI based Mux demonstrates better performance with 3.15nW power dissipation. The multiplexers can be used in many combinational circuits, therefore, if the performance of the multiplexer is improved, the complete circuit is bound to give better performance.