An Extended Model for a Punch Through (PT) Trench Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics

In this paper, a new model for a punch though (PT) Insulated Gate Bipolar Transistor (IGBT) is being designed and analyzed by manipulating the different region length, depth and doping. In addition, in this model a side poly has been added which helped to increase the concentration of electric field under the trench. Moreover, a new layer of P(-) has been added in order to increment the hole concentration at the collector region which strengthens the punch through functionality. In short, A final model has been proposed which includes better threshold and I-V relation regarding IGBT characteristics compared with a conventional model of IGBT.