Impact of Self-Heating and Nano-Gap Filling Factor on AlGaAs/GaAs Junction-Less DG-MOSFET Based Biosensor for Early Stage Diagnostics

This article demonstrates a simulation based analysis of sensitivity parameter of Al<;span style="font-size: 14.5px;">_x<;/span>Ga_1-xAs/GaAs Junction-less Double Gate MOSFET (DG-MOSFET) in the form of a biosensor by considering the Nano-Gap Filling and Self-Heating issue. In this work, a Nano-Gap has been introduced in the gate oxide region which acts as a cavity for trapping the bio-particles or biomolecules. Also, the sensitivity of the biosensor has been taken under consideration by incorporating the dielectric modulation method. Hence, the complete performance of the device has been evaluated by introducing the Nano-Gap Filling factor and Temperature Variation. Simulations have been performed extensively by using SILVACO ATLAS TCAD tool. Threshold Voltage change or AVTH is used as the sensitivity parameter, which shows highest sensitivity in case of 100% (Fully Filled) filled Nano-Gap at a low voltage (V_Ds=0.2V). Thus, the addressed issues will help in the realization of biosensors for early detection of diseases.