A Study of Read Variability in Backfill Contact Random Access Memory

Variability between and within cells in an RRAM array are found to drastically reduce the reading window and leading to erratic bits. Main failure mechanisms causing read disturb and variabilities in 1T-1R backfill contact resistive random access memory (BCRRAM) array are investigated in this study. Experimental data reveal that read disturb failure can lead to significant shift in its resistive states. An optimized reading scheme and a modified incremental step pulse programing (ISPP) algorithm are proposed to minimize the occurrence of read disturb failure in BCRRAM arrays.