A Novel Transition Metal Dichalcogenide based Spin Transfer Torque Ternary Content Addressable Memory Design for Match Line Sense Amplifier

Many memory devices can be stored or retrieve the information through addressing particular memory locations, which need for accessing the memory in speed. However, these devices are taking more time to identify the data and contents. So, the time taken for finding the information stored in memory is must be reduced using the content than its address. For this reason, this process introduces an innovative Transition Metal Dichalcogenides (TMD) based Spin Transfer Torque Ternary Content Addressable Memory (STT-TCAM) approach. This approach can be utilized for reducing power consumption and increased processing speed of the memory devices. Consequently, this approach is simulated using the Xilinx tool, and the efficiency is proved for comparing existing techniques.