Near Magnetic Field Emission Analysis for IGBT and SiC Power Modules

Power modules with high-speed power devices such as IGBTs and SiC MOSFETs have become crucial components of medium to high power applications. However, their faster switching speed and compact design raise near magnetic field emission issues. The near magnetic field from the high-speed power modules could contaminate the peripheral circuits and filters. In this paper, the near magnetic field emission is analyzed for three power modules. The root cause and sources of the near magnetic emission are identified. Based on the analysis, the near magnetic field is predicted and verified with finite element analysis (FEA) simulation and measurement.