Characteristics of SiGe Oxidation and Ge Loss according to Ge Content

This paper investigates the oxidation behavior of Epitaxial Silicon Germanium (Si_1-xGe_x) thin-film during a dry strip process. In this study hydrogen radicals generated through H₂/N₂ plasma, which is known to suppress surface oxidation, was examined. Oxidation behavior and Ge loss rate are compared according to Ge content.