Smart Adaptive Refresh for Optimum Refresh Interval Tracking using in-DRAM ECC

This paper improved refresh issues by using the in-DRAM ECC. DRAM tends to have in-DRAM ECC to care about single bit DRAM cell fails, so it is easier to use in-DRAM ECC to make DRAM stronger from several leakage issues. We used in-DRAM ECC to detect some particular cells that have a weak characteristic of retention time and we operated refresh operations automatically based on this particular characteristic for saving a lot of power consumptions overcoming VRT issue. Our experimental results improved power consumption by 33% first by managing the retention time of DRAM to reduce refresh overhead. Furthermore, depending on the characteristics of the cell, it will automatically find the most reasonable refresh operating method, which will result in more power consumption gains.