Modeling of electrochemical metallization-based transport in vertical transition metal dichalcogenide (TMD) memristors

Transition metal dichalcogenide (TMD) memris-tors with vertical transport and atomic scale inter-electrode distances have recently been reported. These devices demonstrate bipolar switching characteristics, with relatively low switching voltages. With multiple input sweeps, variability in switching behaviour is also seen. Our work models the transport in vertical TMD memristors, with a focus on explaining the current-voltage (I-V) characteristics and the associated variability, by analysing different current components.