1200V Discrete CoolSiC(TM) MOSFETs in a Comparison with the Trenchstop HighSpeed IGBTs for High-Speed Spindles and Servo Drive System

In this paper, it is presented the performance of 1200 V discrete CoolSiC(TM) MOSFETs in a comparison with high-speed IGBTs from Infineon, focusing on servo-drive applications. Discrete CoolSiC(TM) MOSFET devices in servo-drive applications can contribute to tremendous system improvements with the many advantages that wideband gap materials offer. Powerful SiC MOSFETs provide up to 80% total loss reduction (see Figure 1), compared to Si IGBTs. Resistive behavior enables an enormous reduction of conduction losses at low current, where drives operate normally 90% of their operation time. This is seen especially when a MOSFET operates in a synchronous operation during a breaking mode(see breaking graph Figure 1). In addition, more than 50% of switching losses can be reduced at the same EMC level. This is due to low Qrr, no tail current and temperature-independent switching losses, which has been shown by experimental results and simulation validation. For applications like servo drives, size and weight are very important, however, cooling capability is very limited. Therefore, discrete CoolSiC(TM) MOSFETs are the ideal solution to fulfilling these requirements and improving performance. In addition, the reduced losses allow for implementation of a zero maintenance fanless design. In addition, the motor and drive can be integrated, and therefore reduce the control cabinet size, and simplify cabling.