Optimization of Monolithic RC Snubber in a 100V Shielded-gate MOSFET

In this paper, a new method is proposed to implement a monolithic snubber in a 100V shielded-gate MOSFET with minimal impact on the die active area. Prototypes are built with different spacing between the source contacts to provide different damping options. Equivalent resistance and capacitance of the snubber components are measured and compared with theoretical calculations. Prototypes are tested in the same DC-DC converter and results are compared. It is also shown how to optimize the external snubber, considering the integrated monolithic one in case more damping is required.