Development of an Accurate SPICE Model for a new 1.2-kV SiC-MOSFET device

This paper describes a SPICE model for a new discrete 1.2-kV SiC-MOSFET. The developed SPICE model features nonlinear stray capacitances and accurate output characteristics in a saturation region. This model shows excellent reproducibility of the turn-on and turn-off switching waveforms for both gate drive circuit and main power circuit simultaneously, which indicates a high potential of the model as a future design tool.