Rugged 4500V HiPak Module with 1500A Current Rating and 150°C Capability for Traction Application

In this paper, we present a new generation HiPak 4.5 kV IGBT module rated at In=1500 A and Tj=150deg C optimized for various applications in the high power range. The IGBT and diode chipset employed here has been built from the successful development of the 3(exp rd) generation 6.5 kV HiPak platform. It incorporates the very rugged enhanced planar (EP) IGBT cell and the field shielded anode (FSA) diode technology including field charge extraction (FCE) structures on the backside. The paper describes key design modifications implemented in order to achieve an increased current and temperature rating while maintaining the same footprint. Furthermore, the previously reported robust passivation concept has been implemented in order to increase IGBT and diode robustness against humidity, making it ideal for demanding applications.