A Highly Integrated High Performance 36W Pulsed X-Band GaN IMFET Power Amplifier in a compact EHS Laminate Package

This paper describes a highly-integrated, high efficiency, internally matched, low-cost GaN High Electron Mobility Transistor (HEMT) FET power amplifier (IMFET PA) operating in the X-band, 9.2 - 9.7 GHz, using Qorvo's high performance 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are 7 mm x 7 mm. The module is in an air-cavity surface mount embedded heat spread (EHS) laminate package. The amplifier delivers typical performance of 36 W pulsed power, 42 % power added efficiency (PAE) and 9.4 dB power gain.