UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact

In this work, the UIS withstanding capability under various inductive load conditions has been comprehensively studied for enhancement-mode HEMTs (E-HEMTs) with Schottky and ohmic p-GaN gate contact, respectively. With increased on-state time for the devices under test (DUT) till destruction, the UIS safe operation area (SOA) with varying peak current and withstand time as well as the avalanche energy has been identified.