Design and modeling a mid infrared Raman laser on silicon-on-insulator

We design a 2.232 μm Raman laser with an on-chip ring resonator on a SOI platform compatible with standard foundry processes. Numerical analysis for the laser threshold and output power are conducted to perform the design. Taking the robustness of the design into account, we select the optimized values for the cavity parameters such as coupling coefficients and cavity length. Complete simulation of the laser shows that a minimum threshold power of 16 mW and a slope efficiency of 62% are achievable when the laser is pumped at 2 μm.