Optical and electrical characterization of SiC devices

The semiconductor SiC has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, dielectric strength). However, the ability to produce device quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made in the understanding and control of these defects and in the improved processing of this material. This work has made the possibility of producing SiC based solar cells for high-temperature, high-light intensity, and high-radiation missions, such as experienced by solar probes. In this paper, we present our studies on defects in SiC and the synthesis and characterization SiC based solar cells.