Real time optics of p-type silicon deposition on specular and textured ZnO surfaces

Using insights from real time spectroscopic ellipsometry (RTSE) studies, we have developed an evolutionary phase diagram that describes rf plasma-enhanced chemical vapor deposition (PECVD) of p-type silicon (Si:H) films on specular zinc-oxide (ZnO)-coated glass substrates at 200/spl deg/C. Using this diagram, optimized conditions have been identified for the deposition of 200-/spl Aring/-thick, single-phase, p-type microcrystalline Si:H (/spl mu/c-Si:H) on glass/(specular ZnO). These conditions have also been applied for p-layer incorporation into an amorphous Si:H (a-Si:H)-based p-i-n solar cell fabricated on a glass/(textured SnO/sub 2/)/ZnO bilayer substrate. We find that the microstructural evolution, phase, and optical properties are similar for the optimized 200-/spl Aring/-thick /spl mu/c-Si:H p-layers prepared on the specular and textured ZnO. These results demonstrate that the presence of macroscopic substrate texturing does not necessitate process reoptimization for /spl mu/c-Si:H film growth on ZnO.