Comparative studies of Si, GaAs and InP millimeter-wave impatt diodes

With the increasing interest in millimeter-wave applications, there is a renewed demand for solid state sources with ever higher output power levels and efficiencies. At present, high efficiency oscillators above 100 GHz have been fabricated from silicon diodes. However, recent progress in GaAs and InP technology [1] [3] raise the possibility to use these materials. In this context, it appears necessary to investigate from a theoretical point of view their respective capabilities. The purpose of this paper is to present results of simulation of Si, GaAs and InP double drift region diodes in the 94, 140 and 220 atmospheric attenuation windows.