Indium phosphide millimeter-wave devices

The use of InP for Gunn oscillators and amplifiers has recently led to a number of very useful products for millimeterwave applications. The ability to grow high purity indium phosphide material as required for Gunn effect devices and the increased understanding of the operation of both amplifier and oscillator diodes have lead to some significant improvements in the performance of these devices. CW efficiencies above 9% at 56 GHz and above 4.5% at 94 GHz have been obtained with these improved InP oscillator diodes. Average efficiencies of recent shipments of 56 GHz diodes are well above 6%. CW powers of over 250 mW have been obtained in the 53 GHz region.