Back-Side-On-BOX heterogeneous laser integration for fully integrated photonic circuits on silicon

We present a fabrication flow integrating lasers at the backside of silicon-on-insulator wafers. It is expected to be compatible with integration of other material-layers and reduce the variance of lasers performance. A DFB laser fabricated accordingly exhibits a total waveguide-coupled power of 60mW at 160mA/20°C.