Performance Analysis of WS2 TMD Material as an Absorber layer used in Solar Cell

In this work, we analyze the effect of the thickness of Tungsten Disulfide (WS2) transition metal dichalcogenide (TMD) material layer as an absorber layer for solar cell. The simulation of the model has been demonstrated by using SCAPS-1D at different thickness of the WS2 absorber layer. It is observed that increment in the power conversion efficiency (PCE) of n-ZnO/n-CdS/p-WS2 based solar cell is from 23.73% to 29.74% as the thickness of absorber layer varies from 500 nm to 3000 nm respectively. The analyzed results deliver remarkable guideline for fabrication of efficient WS2 based solar cell.