A Model for Hole Trapping-Detrapping Kinetics During NBTI in p-Channel FETs: (Invited paper)

The contribution of hole trapping and detrapping
$(\Delta\mathbf{V}_{\mathbf{HT}})$
to overall threshold voltage shift
$(\Delta \mathbf{V}_{\mathbf{T}})$
during and after Negative Bias Temperature Instability (NBTI) stress is obtained using an Activated Barrier Double Well Thermionic (ABDWT) model. ABDWT, along with generated interface
$(\Delta \mathbf{V}_{\mathbf{IT}})$
and bulk
$(\Delta \mathbf{V}_{\mathbf{OT}})$
trap kinetics computed by the previously published BTI Analysis Tool (BAT), can explain
$\Delta \mathbf{V}_{\mathbf{T}}$
time kinetics during and after DC and AC stress and mixed DC-AC stress under varying experimental conditions. The model is validated using measured data from MOSFETs with High-K Metal Gate (HKMG) based gate insulator processes.