Performances of Self-Aligned Top-Gate a-IGZO TFTs with Ultrathin PECVD SiO2 Gate Dielectric

Performances of self-aligned top-gate (SATG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with ultrathin SiO2 gate dielectric grown by conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. Results show that the fabricated a-IGZO TFTs could present a high performance even if the PECVD gate SiO2 is thinned to 10 nm scale.