Fabrication and Characterization of SnO2/CH3NH3PbI3 based Photodetector

In this paper, we report the Photodetector based on SnO
2
/CH
3
NH
3
PbI
3
based heterojunction diode on Indium doped tin oxide (ITO) substrate. The perovskite CH
3
NH
3
PbI
3
and metal oxide SnO
2
are synthesized using the sol-gel method. The synthesized metal oxide SnO
2
and perovskite CH
3
NH
3
PbI
3
characterized using X-Ray diffraction (XRD), High resolution Scanning Electron Microscope (HRSEM), UV visible and Photo luminance Spectroscopy. XRD result confirms the formation rutile tetragonal crystalline structure of SnO
2
and Tetragonal crystalline structure of perovskite CH
3
NH
3
PbI
3
, and HRSEM image shows the uniform distribution of particles. An efficient photoluminescence band is observed at ~795 nm in SnO
2
/CH
3
NH
3
PbI
3
thin films at ambient temperature when excited with 473 nm wavelength light Finally, SnO
2
/CH
3
NH
3
PbI
3
based heterojunction diode is investigated for an electrical and optical response using fabricated ITO/SnO
2
/CH
3
NH
3
PbI
3
/Ag Photodetector device.