Absorption in Al0.20Ga0.80As-GaAs MQWs Heterostructure

This paper presents a brief study of the GaAs/Al
0.20
Ga
0.80
As material system based photo-detector via simulation of the optical absorption, which has been simulated by making the detailed calculations of the envelope wavefunctions associated with valence and conduction band and as well as calculation of the dispersed energies of electrons and holes within the respective bands of the heterostructure. The calculated absorption peak is found to congregate at the photonic wavelength ~ 0.76 µm, which confirm the utility of the designed heterostructure in photonic biosensors and luminescence scintillators.