Normally-OFF Recessed Gate n-type Junctionless MOSFET for Radio Frequency Applications

For upcoming technology nodes Junctionless (JL) MOSFET would be a promising candidate because its conduction mechanism dose not dependent on ultra -steep and ultra -sharp junction at source/drain and channel interface. Industry is demanding for the large On-state current with the low leakage current, high doping in JL MOSFET leads depletion mode However, with high doping is required for large ON-state current (I_ON). Low doping, high workfunction and narrow channel thickness is necessary for enhancement mode JL MOSFET but On-state current is decreases. A new structure is proposed in this work to reduce the earlier mentioned problem. The work has been done with the help of TCAD simulations using Sentaurus. Recessed gate concept has been used to make enhancement mode N-JLMOS with same On-state current and low leakage current. Silicon region is recessed under the gate region and some gate portion is extended towards source and drain region. RF performance of proposed device has also been investigated.