Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

The concept of a spintronic memristor based on angular variation of Tunnel Magnetoresistance relies on the development of an isotropically coercive free layer able to stabilize the magnetization in any in-plane direction. In this work, we first demonstrate those properties in a composite ferromagnet/antiferromagnet/ferromagnet trilayer by performing hysteresis loops at different in-plane angles and rotating field experiments. In the second part, we describe the material composition of the total stack and the fabrication process to create the final device. In the last part, the hysteresis loops at different in-plane angles and the rotating field experiments are performed at device level and compared with the ones performed at full sheet film, confirming the magnetically isotropic nature of the free layer.