WBG power semiconductor packaging with advanced interconnection technologies

Sinter joining technology has attracted much attention as the new interconnection technology which realizes both high performance and high reliability for WBG devices. The author has developed Ag sinter joining with a hybrid of Ag micron/submicron size particles providing excellent heat-resistance beyond 200 deg C. Ag reacts with oxygen in air resulting in low temperature sintering around 200 deg C. The microporous joining structure provides high strength as well as excellent heat/electric conductivity. The die-attached devices are stable even up to 250 deg C in thermal shock and power cycling. The latest progress of sinter joining is summarized.