Models of Threshold Voltage and Subthreshold Slope for Macaroni Channel MOSFET

Models of threshold voltage and subthreshold slope (SS) for macaroni channel MOSFET are built for the first time based on the potential model in our previous work. These models clearly illustrate the variations of threshold voltage and subthreshold slope caused by short-channel-effects when changing gate length, silicon thickness, oxide thickness, channel doping concentration, and drain-to-source bias. The good agreements between simulations and models verified the validity of those models.