A Compact 4~8 GHz Low Noise Amplifier MMIC with Standing-By Feature for 5G Communication Applications

This paper presents a compact 4~8 GHz low noise amplifier monolithic microwave integrated circuit with standing- by feature for 5G communication applications. A two-stage common source configured topology is employed to obtain good noise and linearity performance. A gate bias cut-off technique is adopted to offer a low power consumption standing-by mode. The amplifier is fabricated with a 0.25um GaAs pHEMT process. It has a small chip size of 0.85 mm×1.35 mm and is tested using a very compact package. Measurement results show that the amplifier is able to workover4 GHz to 8 GHz frequency range. The proposed amplifier exhibits a power gain of greater than 21.5 dB and a noise figure of less than 1.43 dB in sub-6 GHz. Output 1-dB compression point and 3rd-order intercept point are greater than 13.5 dBm and 30 dBm over the frequency range from 4 GHz~ 8 GHz, respectively.