Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs

The generation of defect states in p-MOSFETs under negative bias temperature instability (NBTI) has been extensively discussed in previous literature. However, only a few studies have discussed the relationship between interface defects and
off
-state leakage. Therefore, this article analyzes the impact of interface defects generated by NBTI on gate-induced drain leakage (GIDL). In general, GIDL is generated through band-to-band tunneling (BTBT) at large gate-to-drain bias (
${V}_{\text {GD}}$
). In this article, NBTI causes an increase in GIDL at extremely low
${V}_{\text {GD}}$
. By measuring at different temperatures and comparing the GIDL generated from hot carrier degradation (HCD), it was confirmed that the GIDL would still be generated through trap-assisted tunneling (TAT) and thermal excitation at an extremely low
${V}_{\text {GD}}$
.