Effect Of The Etching Regimes On The Memristor Properties Of Al2O3 Thin Layers

The switching effect in the Au-Ta-Al₂O₃-Cr structure was revealed. The memristor properties with bipolar switching were revealed at switching voltages U_set = 5.2 V and U_reset = -3.5 V. The ratio of high resistance and low resistance states was 7.10⁵ Ohms. Effect of the etching regimes on the memristor properties of Al₂O₃ thin layers was studied. It was revealed that the best way to remove aluminum oxide is to etch the structures in a 20% HF solution without contact protection.