Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations

This research work reports reliability assessment of junctionless (JL) FinFET in the presence of interfacial trap charges and radiations. The degradation in performance of JL FinFET is evaluated by calculating various figure of merit. Linearity behavior of the device is studied by considering higher order coefficient of transconductance, VIP2, VIP3, IIP3, IMD3. Also, a comparative analysis of various structures obtained by considering different semiconductor/oxide combinations is performed. Impact of interface trap charges and radiations on performance of these devices is carried out in detail. Results show that, the structure having higher value dielectric oxide provides better immunity to trap charges. The mechanism of Single event transients is also studied in JL FinFET and result show that the peak value of transient current increases with increase in LET values.