Improving the reliability of SRAM-based PUFs in the presence of aging

The utilization of power-up values in SRAM cells for the generation of PUF responses has been widely studied. It is important that the cells used for this purpose are stable, i.e., the cells must have a strong tendency towards one of the two possible values (‘0’ or ‘1’). Some methods have been presented that aim at increasing the reliability of this type of PUFs by selecting the strongest cells among a set of them. However, they feature some drawbacks, either in terms of their practical feasibility or of their actual effectiveness selecting the strongest cells in different scenarios. In this work, the experimental results obtained for a new method to classify the cells according to their strength are presented and discussed. The technique overcomes some of the drawbacks that the previous methods present. In particular, it is experimentally demonstrated that the technique presented in this work outstands in selecting SRAM cells that are very robust against circuit degradation, which translates into the construction of reliable SRAM-based PUFs.