Study of GaAs1-xNx/GaAs Quantum Dot Structure for Solar Cell Applications

This paper aims to model and simulate a new quantum dot solar cell (QDSC), based on GaAs
_1-x
Nx/GaAs. In this work, we have studied different effects such as the influence of the concentration of nitrogen, number of quantum dots inserted on the current-voltage J- V and the external quantum efficiency (EQE) of our structure. Our results have shown that the optimal nitrogen content is 3%. With 30 GaAs
_1-x
N
_x
/GaAs QDs layers, relative enhancements of about 7.91 % and 8% of short-circuit current and efficiency achieved, respectively. In addition, the use of 30 layers of QDs increases the maximum of EQE from 85.45% to 96.88%. Therefore, the embedded QDs bring positive effects and help to improve the performance of the solar cell.